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Month: May 2013
Introduction A Software-Defined Radio (SDR) is one that implements some traditional hardware radio functions in software. For example, in the extreme case one can use a high performance Analog-to-Digital Converter (ADC) to digitize a wide swath of RF spectrum, then implement functions in software to provide the down-conversion mixer, filtering, and baseband recovery. Such a […]
While Sumitomo Electric Device Innovations, Inc., SEDI, (formerly Eudyna) was the first to the marketplace with a reliable high volume GaN Power HEMT, there are many manufacturers who are offering GaN microwave power devices today. This application note will look at a few of the major factors in determining the reliability and robustness of different […]
Today’s device landscape appears to be a gold mine for newly minted microwave engineers. In many ways, GaN has become the great equalizer, allowing even inexperienced engineers to build amplifiers with a level of performance that would have been unachievable 10 years ago. The high gain, high power density, and reasonably high terminal impedances that […]
Many solid state amplifier designers have shown strong interest in the higher power and wider bandwidth possible with the new GaN HEMT devices. An example of a moderate bandwidth amplifier using SEDI’s EGN045MK GaN 45W device is shown. Amplifier Features Instantaneous Bandwidth: 1.3-1.8 GHz Pout: 50 W Linear Gain: 13 dB Gain Flatness: < 1.0 […]
A 10-W, GaN HEMT SEDI device is found to be useful for designs from low frequencies up to 5 GHz. A design example over a subband of this performs over more than one octave at lower frequencies. The device is biased class AB. A linear single-ended amplifier for broadband UHF applications using the EGN010MK was […]
Abstract: Various methods of combining high power “push-pull” devices are often possible. Two methods, push-pull and balanced configurations, are theoretically discussed. A practical example with a push-pull and a balanced amplifier using the same 150 W, S-band GaAs device(1) is reported and amplifier data are compared and analyzed. Various methods of combining high power “push-pull” […]
The purpose of this application note is to give some general basic guidelines to bias high-power GaAs FET devices safely. However these guidelines are not a complete insurance against oscillations since each device is a unique case and its stability has to be analyzed by using standard methods if needed. While considerable effort is spent […]