Introduction This white paper describes the performance and characteristics of two new ultra low noise LNAs from Skyworks. Topics include techniques used in biasing and matching these devices. A circuit description, including information on thermal considerations, is also provided. The SKY67150-396LF and SKY67153-396LF were designed to cover a wide bandwidth with the use of two […]
• Microwaves101 – Includes encyclopedia of terms and acronyms, useful on-line calculators, and downloads. • RF Globalnet – Microwave Industry News, Analysis, and Technical Articles • Modelithics – Industry leading provider of simulation models for RF, Microwave, and Millimeter-wave devices. • Black and White or Color Smith Chart (PDF) • Free RF Lineup […]
Vendor Technical Support:
• Aethercomm • Carlisle Interconnect Technologies (Tensolite) • CML Microcircuits • Dielectric Laboratories • GigOptix • Gowanda Electronics • Innovative Power Products Catalog • KCB Solutions, Inc. • Linear Technology • Mercury United Electronics • Micro-Coax • Mini-Circuits Application Notes • MtronPTI • Passive Plus Technical Documents • Passive Plus AVX/ATC Cross Reference • Pulse […]
Community Information Coming Soon
Thank you for visiting CDI’s RF/Microwave Community page. Please check back soon! Click here for questions or technical inquiries or call CDI at 1-800-777-7334.
Introduction A Software-Defined Radio (SDR) is one that implements some traditional hardware radio functions in software. For example, in the extreme case one can use a high performance Analog-to-Digital Converter (ADC) to digitize a wide swath of RF spectrum, then implement functions in software to provide the down-conversion mixer, filtering, and baseband recovery. Such a […]
While Sumitomo Electric Device Innovations, Inc., SEDI, (formerly Eudyna) was the first to the marketplace with a reliable high volume GaN Power HEMT, there are many manufacturers who are offering GaN microwave power devices today. This application note will look at a few of the major factors in determining the reliability and robustness of different […]
Today’s device landscape appears to be a gold mine for newly minted microwave engineers. In many ways, GaN has become the great equalizer, allowing even inexperienced engineers to build amplifiers with a level of performance that would have been unachievable 10 years ago. The high gain, high power density, and reasonably high terminal impedances that […]
Many solid state amplifier designers have shown strong interest in the higher power and wider bandwidth possible with the new GaN HEMT devices. An example of a moderate bandwidth amplifier using SEDI’s EGN045MK GaN 45W device is shown. Amplifier Features Instantaneous Bandwidth: 1.3-1.8 GHz Pout: 50 W Linear Gain: 13 dB Gain Flatness: < 1.0 […]
A 10-W, GaN HEMT SEDI device is found to be useful for designs from low frequencies up to 5 GHz. A design example over a subband of this performs over more than one octave at lower frequencies. The device is biased class AB. A linear single-ended amplifier for broadband UHF applications using the EGN010MK was […]
Abstract: Various methods of combining high power “push-pull” devices are often possible. Two methods, push-pull and balanced configurations, are theoretically discussed. A practical example with a push-pull and a balanced amplifier using the same 150 W, S-band GaAs device(1) is reported and amplifier data are compared and analyzed. Various methods of combining high power “push-pull” […]