Sumitomo – Power Device Mounting Considerations

A 10-W, GaN HEMT SEDI device is found to be useful for designs from low frequencies up to 5 GHz. A design example over a subband of this performs over more than one octave at lower frequencies. The device is biased class AB. A linear single-ended amplifier for broadband UHF applications using the EGN010MK was designed. The approach uses a series RC on the input to improve gain flatness. Data from the resulting design is reported. > Read More

 
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Paul E. White – Component Distributors, Inc.