CDIAN002: Choosing the Right GaN Device for Reliability and Robustness

Choosing the Right GaN Device for Reliability and RobustnessWhile Sumitomo Electric Device Innovations, Inc., SEDI, (formerly Eudyna) was the first to the marketplace with a reliable high volume GaN Power HEMT, there are many manufacturers who are offering GaN microwave power devices today. This application note will look at a few of the major factors in determining the reliability and robustness of different GaN product offerings, and will also give some perspective on the cost impact of those factors. For purposes of this paper, reliability is defined as long-term device performance and survival. Robustness is defined as the ability of the device to withstand short-term conditions that, if not properly managed, could destroy or degrade the GaN device.

When deciding which device is appropriate for a high power application, there are several key factors that need to be evaluated. These include the following:

• The nature of the driving waveform (pulsed, CW, high Peak/Average)
• VSWR conditions that result in excessive drain current (thermal issues)
• VSWR conditions that result in excessive drain voltages (breakdown issues)
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Paul E. White – Component Distributors, Inc.