CDIAN003: CDI GaN Bias Board User’s Guide

Gallium Nitride (GaN) transistors depletion mode devices that require special gate and drain bias sequencing to prevent catastrophic damage. This application note provides an overview of GaN device bias requirements and how to address them. Click here to download the complete application note.

F465: 10W 2-Stage GaN Amplifier

The recent introduction of the Sumitomo F465 10W 2-Stage GaN device has opened the door for high efficiency, broadband, medium to high power designs requiring a small physical footprint. The ability of the RF design engineer to tune the input, inter-stage, and output match of this versatile device to suit his specific application requirements makes this device appealing on many levels. A single device can be selected to achieve moderate gain and efficiency covering a wide bandwidth. Likewise, the same device can be tuned to a narrower band to achieve much higher gain and efficiency. The recently created RF Applications Lab from Component Distributors, Inc. (CDI) has had the privilege of getting first access to this device for evaluation purposes to further showcase the versatility of the F465. This application note will cover the first F465 reference design operating over a decade of bandwidth (30MHz to 600MHz) achieving high saturated efficiency (>50%) and high saturated power (>41.5dBm) while maintaining gain greater than 28dB operating at a drain voltage of 28V. In conjunction with the development of the F465 reference design board, CDI developed a GaN bias board capable of sequencing two independent gate voltages as well as a single drain supply voltage for two GaN devices.

Click here to download the complete Reference Design in PDF format.

Skyworks White Paper: Ultra Low Noise Amplifiers By Stephen Moreschi and Jody Skeen


This white paper describes the performance and characteristics of two new ultra low noise LNAs from Skyworks. Topics include techniques used in biasing and matching these devices. A circuit description, including information on thermal considerations, is also provided.

The SKY67150-396LF and SKY67153-396LF were designed to cover a wide bandwidth with the use of two separate devices with their design and performance analyzed from 30 MHz – 4.0 GHz. Package pin-outs for each device are identical, with the only differences in the applications schematic and frequency band of interest for each device. The remainder of the paper will primarily focus on the SKY67150-396LF but will also be applicable, unless otherwise noted, for the SKY67153-396LF.

Click Here to Download the Entire White Paper

RF and Microwave Useful Links or Tools:

Microwaves101Includes encyclopedia of terms and acronyms, useful on-line calculators, and downloads.
RF Globalnet – Microwave Industry News, Analysis, and Technical Articles
Modelithics – Industry leading provider of simulation models for RF, Microwave, and Millimeter-wave devices.
Black and White or Color Smith Chart (PDF)
Free RF Lineup Cascade Analysis Excel Tool
Electronic Symbols in MS Word .doc format

Vendor Technical Support:

Carlisle Interconnect Technologies (Tensolite)
CML Microcircuits
Dielectric Laboratories
Gowanda Electronics
Innovative Power Products Catalog
KCB Solutions, Inc.
Linear Technology
Mercury United Electronics
Mini-Circuits Application Notes
Passive Plus Technical Documents
Passive Plus AVX/ATC Cross Reference
Pulse Electronics
RF Industries

CML – Bringing the Flexibility of Software Defined Radio to Narrowband and Industrial Wireless Applications


A Software-Defined Radio (SDR) is one that implements some traditional hardware radio functions in software. For example, in the extreme case one can use a high performance Analog-to-Digital Converter (ADC) to digitize a wide swath of RF spectrum, then implement functions in software to provide the down-conversion mixer, filtering, and baseband recovery. Such a radio implementation is very powerful, as it can make “on the fly” adjustments to recover different types of radio signals across a wide range of frequencies. However, this ultimate flexibility comes at the cost of high power consumption, the expense of cutting-edge performance ADC and Digital Signal Processor (DSP) devices and the significant challenge of developing underlying software algorithms.

Click Here to Download the Entire White Paper

CDIAN002: Choosing the Right GaN Device for Reliability and Robustness

Choosing the Right GaN Device for Reliability and RobustnessWhile Sumitomo Electric Device Innovations, Inc., SEDI, (formerly Eudyna) was the first to the marketplace with a reliable high volume GaN Power HEMT, there are many manufacturers who are offering GaN microwave power devices today. This application note will look at a few of the major factors in determining the reliability and robustness of different GaN product offerings, and will also give some perspective on the cost impact of those factors. For purposes of this paper, reliability is defined as long-term device performance and survival. Robustness is defined as the ability of the device to withstand short-term conditions that, if not properly managed, could destroy or degrade the GaN device.

When deciding which device is appropriate for a high power application, there are several key factors that need to be evaluated. These include the following:

• The nature of the driving waveform (pulsed, CW, high Peak/Average)
• VSWR conditions that result in excessive drain current (thermal issues)
• VSWR conditions that result in excessive drain voltages (breakdown issues)
> Read More

Click Here to Download the Entire Application Note
Paul E. White – Component Distributors, Inc.

CDIAN001: Stability Considerations When Designing Microwave Power Amplifiers

Today’s device landscape appears to be a gold mine for newly minted microwave engineers. In many ways, GaN has become the great equalizer, allowing even inexperienced engineers to build amplifiers with a level of performance that would have been unachievable 10 years ago.

The high gain, high power density, and reasonably high terminal impedances that are available with “high band gap” devices such as SiC and GaN HEMTs have provided some powerful tools to the PA designer’s “bag of tricks”, but there are still a few landmines that need to be considered early in the design process to insure a robust solution when designing a high power broadband amplifier. One that designers often step on is device stability (or more appropriately, instability). This application note will discuss the fundamental cause of this instability, and practical methods to mitigate the problem in a real world environment.
> Read More

Click Here to Download the Entire Application Note
Paul E. White – Component Distributors, Inc.

Sumitomo – A GaN 45W amplifier using the EGN045MK covering 1.3-1.8 GHz

Many solid state amplifier designers have shown strong interest in the higher power and wider bandwidth possible with the new GaN HEMT devices. An example of a moderate bandwidth amplifier using SEDI’s EGN045MK GaN 45W device is shown.

Amplifier Features
Instantaneous Bandwidth:

  • 1.3-1.8 GHz
  • Pout: 50 W
  • Linear Gain: 13 dB
  • Gain Flatness: < 1.0 dB
  • Class of Operation: AB
  • Power-Added Efficiency:
    >40% at Pout> 50 W Average signal
Click Here to Download the Entire Application Note